Ca₂V₂Bi₂O₁₂ is a complex mixed-metal oxide semiconductor belonging to the family of vanadium-bismuth compounds with potential applications in photocatalysis and optoelectronics. This is primarily a research-phase material studied for its unique electronic structure resulting from the combination of vanadium and bismuth centers; it has not yet achieved widespread industrial adoption but is of interest to materials scientists exploring novel semiconductors for energy conversion and environmental remediation applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02330 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.014 | eV/atom | — |