Ca₁₂Ga₂N₁₀ is a quaternary nitride semiconductor compound combining calcium, gallium, and nitrogen in a fixed stoichiometric ratio. This is a research-phase material that belongs to the wide-bandgap nitride semiconductor family, which shows promise for high-power and high-temperature electronic applications where traditional semiconductors reach their limits. The material's potential lies in optoelectronic and power device applications, though industrial adoption remains limited and further development of synthesis, doping, and processing methods is ongoing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9035 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.018 | eV/atom | — |