Ca₁₂As₄N₄ is a quaternary nitride semiconductor compound combining calcium, arsenic, and nitrogen elements in a crystalline structure. This is an experimental research material being investigated for potential optoelectronic and wide-bandgap semiconductor applications, particularly within the broader family of III-V and related nitride semiconductors that are conventionally used in LEDs, power electronics, and high-frequency devices. The material's mixed-metal nitride composition positions it as a candidate for exploring novel semiconductor properties, though industrial deployment remains limited compared to established alternatives like GaN and InN.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9,367.8 | ksi | — | ||
Shear Modulus(G) | 6,818.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9526 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.283 | eV/atom | — |