CaSnS₃ is a ternary chalcogenide semiconductor compound combining calcium, tin, and sulfur in a layered crystal structure. This material is primarily of research interest as a potential photovoltaic absorber and optoelectronic device material, belonging to the broader family of earth-abundant semiconductors being explored as alternatives to lead-based perovskites and conventional III-V semiconductors. Its appeal lies in the use of non-toxic, relatively abundant elements, though it remains largely in experimental development stages with ongoing investigation into synthesis methods, phase stability, and device integration.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01250 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2810 | eV/atom | — |