Ca₁Mg₂As₂ is an experimental III-V compound semiconductor belonging to the calcium-magnesium-arsenide family, synthesized primarily for research into wide-bandgap and optoelectronic materials. This material is not widely commercialized but represents exploration within the ternary arsenide semiconductor space for potential applications in high-temperature electronics, photonic devices, and radiation-hard semiconductors where conventional III-V compounds (GaAs, InP) face limitations. Interest in this composition stems from the combination of alkaline-earth and transition elements to engineer bandgap properties and thermal stability for next-generation semiconductor platforms.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,762.7 | ksi | — | ||
Shear Modulus(G) | 5,617.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.374 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.044 | eV/atom | — |