CaGaSnH is an experimental ternary hydride semiconductor compound combining calcium, gallium, and tin with hydrogen. This material belongs to the broader family of metal hydrides and intermetallic semiconductors being investigated for novel optoelectronic and energy conversion applications. Research on such quaternary hydride systems is driven by the potential to engineer bandgaps and carrier properties through compositional tuning, though practical device maturity remains limited compared to conventional III-V or II-VI semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,757.2 | ksi | — | ||
Shear Modulus(G) | 4,582.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02020 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4310 | eV/atom | — |