Ca₁Bi₄O₈ is an oxide semiconductor compound belonging to the bismuth oxide family, a class of materials investigated for their unique electronic and photonic properties. This material is primarily of research and development interest rather than widespread industrial use, with potential applications in optoelectronics, photocatalysis, and solid-state devices where bismuth oxide's band gap and crystal structure can be leveraged for light emission or catalytic activity. Engineers consider bismuth oxide compounds when conventional semiconductors (like silicon or gallium arsenide) are unsuitable due to cost constraints, radiation tolerance requirements, or the need for specific optical or thermal properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 10,162.4 | ksi | — | ||
Shear Modulus(G) | 4,983.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00960 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.496 | eV/atom | — |