C6N2 is a carbon-nitrogen compound semiconductor under active research, part of the broader family of graphitic carbon nitride (g-C3N4) and related carbon-nitride materials that combine carbon and nitrogen atoms in crystalline or amorphous networks. These materials are being investigated for photocatalysis, energy storage, and optoelectronic applications where the tunable bandgap and chemical stability offer advantages over traditional semiconductors. Unlike commercial Si or GaAs devices, carbon-nitrogen compounds remain largely in the research phase, with potential as cost-effective, earth-abundant alternatives for visible-light photocatalysis and next-generation electronic devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00540 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.897 | eV/atom | — |