C4 N4 S4 Ba2

semiconductor

· C4 N4 S4 Ba2

C₄N₄S₄Ba₂ is an experimental mixed-anion semiconductor compound containing barium, combining nitrogen, sulfur, and carbon in a crystalline lattice structure. This material belongs to the emerging class of multi-anion semiconductors being investigated for photovoltaic and optoelectronic applications, where the combination of different anionic species can create tunable band gaps and enhanced light absorption compared to traditional binary semiconductors. Research into such barium-based chalconitrides is still primarily academic, focusing on understanding structure–property relationships and potential use in next-generation thin-film solar cells or light-emitting devices.

experimental photovoltaicsoptoelectronic devicesthin-film semiconductorsband gap engineeringsolid-state research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.912	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5690	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

C4 N4 S4 Ba2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control