C2 V6 As2
semiconductorC2V6As2 is a III-V semiconductor compound composed of vanadium and arsenic elements, belonging to the family of binary and ternary semiconductors used in optoelectronic and high-frequency applications. This material is primarily of research and developmental interest rather than established commercial production, with potential applications in infrared detection, high-speed electronics, and specialized photonic devices where its bandgap and carrier transport properties may offer advantages over conventional semiconductors like GaAs or InP. Engineers would consider this compound when exploring next-generation semiconductor architectures or when specific electromagnetic response characteristics in niche frequency bands are required.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |