C₂O₆Zn₂ is a zinc-based oxide semiconductor compound, likely a zinc oxalate or similar layered oxide structure under investigation for electronic and photonic applications. While not a widely commercialized material, this compound belongs to a class of metal oxides being researched for emerging technologies where semiconductor properties, optical transparency, or ionic conductivity are advantageous, particularly in thin-film devices and experimental optoelectronic systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19,143.4 | ksi | — | ||
Shear Modulus(G) | 8,126.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.870 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.518 | eV/atom | — |