C2 O6 Mn2
semiconductorC₂O₆Mn₂ is a manganese oxide compound that functions as a semiconductor, belonging to the family of mixed-valence metal oxides with potential electrochemical and catalytic properties. This material is primarily of research and developmental interest rather than established in mainstream industrial production, with investigation focused on energy storage applications, catalysis, and advanced electronic devices where manganese oxides offer cost-effective alternatives to precious metal catalysts. The compound's semiconductor behavior and structural rigidity make it a candidate for next-generation battery electrodes, oxygen reduction catalysts, and sensor materials where manganese's variable oxidation states provide functional advantages.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |