C2 Er1 is a semiconductor compound containing erbium, likely an erbium-based intermetallic or rare-earth compound. This material belongs to the family of rare-earth semiconductors that are actively researched for optoelectronic and photonic applications, particularly where erbium's characteristic near-infrared emission properties (around 1.5 μm) are valuable. It is primarily of interest in telecommunications, integrated photonics, and emerging quantum-information applications, where it offers potential advantages over conventional semiconductors due to its rare-earth element integration; however, it remains largely in the research and development phase rather than high-volume industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19,101.5 | ksi | — | ||
Shear Modulus(G) | 10,625.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00580 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3510 | eV/atom | — |