C1 Tb2 is a terbium-based semiconductor compound with a simple binary composition, likely a terbium chalcogenide or intermetallic phase. This material belongs to the rare-earth semiconductor family and is primarily of research and specialized application interest rather than a mainstream industrial commodity. Its potential applications center on rare-earth device physics, particularly in optoelectronics, magnetic sensing, or high-temperature semiconductor applications where terbium's unique electronic and magnetic properties offer advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 61.53 | GPa | — | ||
Shear Modulus(G) | 30.12 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01350 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3200 | eV/atom | — |