C1 S14 is a semiconductor material from the silicon carbide (SiC) family, likely a specific polytype or doped variant used in high-temperature and high-power electronic applications. This material is employed in power electronics, RF devices, and harsh-environment sensors where thermal stability and electrical performance are critical, offering advantages over traditional silicon in switching speed, breakdown voltage, and operating temperature range.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.281 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.03700 | eV/atom | — |