C1O5U1 is a uranium-bearing oxide compound classified as a semiconductor, likely an experimental or research-phase material within the uranium oxide family. Uranium oxides have been investigated for applications requiring high density, radiation resistance, and specialized electronic properties, though this particular stoichiometry is not widely established in conventional engineering practice. Engineers considering this material should verify its synthesis reproducibility and characterization, as it may be relevant only for specialized nuclear, radiation detection, or advanced research applications where uranium compounds offer unique advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 10,623.1 | ksi | — | ||
Shear Modulus(G) | 6,832.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.480 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.416 | eV/atom | — |