C1 O5 Bi2
semiconductorBismuth pentoxide (Bi₂O₅) is an oxide semiconductor compound belonging to the bismuth oxide family, which exhibits mixed-valence behavior and ionic-electronic conductivity. This material is primarily investigated for photocatalytic applications, oxygen ion conductors in solid oxide fuel cells, and gas sensing devices, where its layered crystal structure and band gap properties enable selective chemical detection and energy conversion. Bismuth oxide compounds are valued alternatives to traditional semiconductor oxides because of their lower toxicity compared to lead-based materials, their tunable electronic properties through compositional variation, and their potential for room-temperature operation in sensing applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |