C1N2Mn1 is an experimental ceramic semiconductor compound combining carbon, nitrogen, and manganese phases, likely a nitride or carbo-nitride material under investigation for electronic or optoelectronic applications. Research into manganese-containing nitride semiconductors focuses on potential use in photocatalysis, hard coatings, and wide-bandgap device applications where the combination of transition metal doping and nitrogen bonding can tailor electronic properties. This composition represents active materials science research rather than an established industrial material, with promise for sustainable or high-performance applications that leverage manganese's catalytic and semiconducting behavior.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11,198.5 | ksi | — | ||
Shear Modulus(G) | 3,885.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00580 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.02400 | eV/atom | — |