Cadmium nitride (Cd₃N₂) is a wide-bandgap semiconductor compound belonging to the III-V semiconductor family, notable for its potential in optoelectronic and high-energy applications. While primarily in the research and development phase, this material is investigated for UV photodetectors, solar cells, and high-temperature electronic devices where its wide bandgap offers advantages over conventional semiconductors. Engineers consider cadmium-based nitrides when applications demand high thermal stability or UV sensitivity, though practical deployment remains limited compared to established alternatives like GaN or AlN due to toxicity concerns and processing maturity.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 14,713.2 | ksi | — | ||
Shear Modulus(G) | 4,091.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.341 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.03700 | eV/atom | — |