C1Mo1 is a molybdenum-carbon compound semiconductor, likely a molybdenum carbide or molybdenum-doped carbon material designed for electronic or catalytic applications. This material represents research into transition metal-carbon systems that combine the electronic properties of semiconductors with the chemical stability and hardness characteristic of carbides. C1Mo1 shows promise in applications requiring both electronic functionality and mechanical durability, with potential advantages in catalytic processes, electrochemical devices, or high-temperature semiconductor applications compared to pure carbon or oxide-based semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 48,205.8 | ksi | — | ||
Shear Modulus(G) | 23,623.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01030 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.1210 | eV/atom | — |