BUO3

semiconductor

· BUO3

BUO₃ is a boron-uranium oxide compound belonging to the mixed-metal oxide semiconductor family. While not widely commercialized, this material is of research interest in nuclear materials science and advanced ceramics due to its unique combination of boron and uranium constituents. The compound represents an experimental composition whose potential applications would leverage the properties of its constituent elements—boron's lightweight and neutron-absorbing characteristics combined with uranium's density and electronic properties.

nuclear materials researchadvanced ceramics developmentradiation shielding studiessolid-state electronics researchrefractory compound investigationmaterials science experimentation

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.741	eV	—
Magnetic Moment(μB)	0.2000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.577	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BUO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control