BSnO₂F is a fluorine-doped tin oxide semiconductor compound combining barium, tin, oxygen, and fluorine elements. This material belongs to the family of wide-bandgap oxide semiconductors and is primarily of research and development interest rather than established industrial production. The fluorine doping strategy is investigated to enhance electrical conductivity and optical transparency, making it potentially valuable for optoelectronic devices, transparent conductive coatings, and next-generation display or photovoltaic applications where alternatives like indium tin oxide (ITO) face cost or supply constraints.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.900 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 9.657e-16 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.760 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data