Br3 N1

semiconductor

· Br3 N1

Br₃N is a rare boron-nitrogen compound semiconductor belonging to the III-V semiconductor family, where boron and nitrogen atoms form a crystalline structure with potential wide-bandgap semiconductor properties. This material is primarily of research interest rather than established in high-volume manufacturing, being investigated for high-temperature, high-power, and radiation-resistant electronic devices that could extend beyond the capabilities of conventional silicon or gallium nitride platforms. The boron-nitrogen system is notable for its chemical stability and theoretical thermal performance, though practical device development remains limited compared to more mature wide-bandgap semiconductors.

high-temperature electronics researchwide-bandgap semiconductor developmentradiation-hardened devicespower conversion prototypesexperimental optoelectronicsaerospace/extreme environment applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00170	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.620	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Br3 N1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control