Br₁₀In₂Sn₄ is an experimental ternary semiconductor compound combining bromine, indium, and tin in a mixed-halide perovskite or perovskite-related crystal structure. This material family is primarily investigated in research settings for optoelectronic and photovoltaic applications, where the tunable bandgap and halide composition offer potential advantages over lead-based alternatives for next-generation solar cells and light-emitting devices. The specific incorporation of indium and tin alongside bromine positions this compound within the emerging class of tin-based and lead-free halide semiconductors, which are pursued to address toxicity and stability concerns in commercial perovskite technology.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 2,797.6 | ksi | — | ||
Shear Modulus(G) | 1,524.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.241 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8200 | eV/atom | — |