Boron nitride (BN) is a ceramic compound with a hexagonal crystal structure analogous to graphite, offering exceptional thermal stability, chemical inertness, and electrical insulation properties. It is widely used in high-temperature applications including crucibles for molten metal processing, thermal management components in electronics, and refractory coatings in aerospace engines. Engineers select BN when thermal conductivity combined with electrical insulation and oxidation resistance is critical, making it particularly valuable in semiconductor manufacturing, metal casting, and extreme-environment thermal barriers where conventional ceramics or oxides would fail or conduct unwanted electrical current.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 244.8 | GPa | DFT · OptB88vdW | ||
| ↳ | 238.0 range 102.7–373.2median of 2 measurements | GPa | DFT | ||
| ↳ | 102.7 | GPa | DFT · PBE | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | DFT · PBE | ||
Elastic Anisotropy(AU) | 217.1 | - | DFT · PBE | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | Pa | DFT · PBE | ||
Exfoliation Energy(Eexf) | 70.12 | meV/atom | DFT · OptB88vdW | ||
Poisson's Ratio(ν)2 entries | 0.2200 | - | DFT · OptB88vdW | ||
| ↳ | 0.2079 | - | DFT · PBE | ||
Shear Modulus(G)3 entries | 177.5 | GPa | DFT · OptB88vdW | ||
| ↳ | 229.0 range 74.52–383.4median of 2 measurements | GPa | DFT | ||
| ↳ | 74.52 | GPa | DFT · PBE |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 2.290 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 4.267 | eV | DFT · OptB88vdW | ||
| ↳ | 5.801 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 6.622 | - | DFT · OptB88vdW | ||
| ↳ | 5.080 | - | DFT · PBE | ||
| ↳ | 5.697 range 4.572–6.822median of 2 measurements | - | DFT · PBEsol | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 4.212 | - | DFT · OptB88vdW | ||
| ↳ | 3.393 | - | DFT · TBmBJ | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | DFT · PBE | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | DFT · PBE | ||
Electron Effective Mass(m*e) | 0.6467 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.8867 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij)2 entries | 0.000 | C/m² | DFT · OptB88vdW | ||
| ↳ | 0.5177 | C/m² | DFT · PBE | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | DFT · PBE | ||
Thermoelectric Power Factor(PF)2 entries | 0.00347 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00270 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -268.3 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 312.7 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 0.000 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00460 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)2 entries | -1.384 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -1.300 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data