BLiON2 is an experimental semiconductor compound in the boron-lithium-oxygen-nitrogen family, currently in research and development rather than established production use. This material class is being investigated for potential applications in wide-bandgap electronics and advanced optoelectronic devices where enhanced thermal stability and unique electronic properties could outperform conventional semiconductors. Interest in this compound reflects ongoing efforts to develop lightweight, high-performance semiconductor alternatives for next-generation power electronics and specialized photonic applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.600 | eV | — | ||
Magnetic Moment(μB) | -0.0000210 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.340 | eV/atom | — |