BiZrO2N

semiconductor

· BiZrO2N

BiZrO2N is an experimental oxynitride semiconductor combining bismuth, zirconium, oxygen, and nitrogen elements. This material belongs to the emerging class of mixed-anion semiconductors being investigated for photocatalytic and optoelectronic applications, offering the potential for tunable bandgap energies and enhanced light absorption compared to conventional oxide semiconductors. Research focus areas include water splitting, environmental remediation, and visible-light photocatalysis, where the nitrogen incorporation can reduce the bandgap relative to purely oxide counterparts.

photocatalytic water splittingenvironmental remediation (air/water purification)visible-light photocatalystsoptoelectronic devices (research stage)thin-film solar applications (experimental)

Compliance & Regulations

?EAR?ISO 10993?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.100	eV	—
Magnetic Moment(μB)	-0.000874	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

Safety & Biocompatibility

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BiZrO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control

Safety & Biocompatibility