BiZnO2F

semiconductor

· BiZnO2F

BiZnO2F is an experimental ternary oxide fluoride semiconductor composed of bismuth, zinc, oxygen, and fluorine elements. Research into this material family is driven by interest in wide-bandgap semiconductors and photocatalytic applications, where the incorporation of fluorine is explored to modulate electronic structure and enhance performance relative to conventional binary oxides. While not yet in widespread industrial production, compounds in this chemical family show promise for optoelectronic and environmental remediation applications.

photocatalytic water purificationUV optoelectronics (research phase)wide-bandgap semiconductorsvisible-light photocatalysisexperimental thin filmsenvironmental remediation devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6000	eV	—
Magnetic Moment(μB)	-2.404e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BiZnO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control