BiWN3

semiconductor

· BiWN3

BiWN3 is an experimental ternary nitride semiconductor compound combining bismuth, tungsten, and nitrogen elements. This material belongs to the family of transition metal nitrides and mixed-cation nitrides under active research for next-generation electronic and optoelectronic devices. As a research-phase compound, BiWN3 is being investigated for its potential in high-bandgap semiconductor applications where conventional materials reach performance limits, though industrial adoption and established manufacturing routes remain limited.

wide-bandgap semiconductor researchhigh-temperature electronicsoptoelectronic device developmentphotovoltaic researchthin-film deposition studiesmaterials screening for electronic applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3000	eV	—
Magnetic Moment(μB)	0.000659	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BiWN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control