BiTaOFN is an oxyfluoride semiconductor compound combining bismuth, tantalum, oxygen, and fluorine elements. This material is primarily investigated in photocatalysis and optoelectronic research contexts, where the mixed-anion composition (oxide-fluoride) offers tunable bandgap and enhanced charge separation compared to conventional single-anion semiconductors. It represents an emerging class of materials for environmental remediation and energy conversion applications, though industrial adoption remains limited pending property optimization and scalability demonstration.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2000 | eV | — | ||
Magnetic Moment(μB) | 2.571e-8 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.6600 | eV/atom | — |