BiSeI is a layered semiconductor compound composed of bismuth, selenium, and iodine, belonging to the family of mixed-halide chalcogenides. This material is primarily of research and developmental interest for next-generation optoelectronic and photovoltaic applications, where its layered structure and tunable band gap make it a candidate for thin-film solar cells, photodetectors, and two-dimensional device platforms. BiSeI and related compounds are being investigated as alternatives to conventional semiconductors in applications where controlled exfoliation and anisotropic electronic properties are advantageous, though widespread industrial adoption remains limited compared to mature semiconductor technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 20.30 | GPa | — | ||
Exfoliation Energy(Eexf) | 217.5 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.3200 | - | — | ||
Shear Modulus(G) | 9.180 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.828 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.320 | eV | — | ||
| ↳ | 1.280 | eV | — | ||
| ↳ | 1.529 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 66.86 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -196.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4354 | eV/atom | — |