BiSeBr is a ternary bismuth-based semiconductor compound combining bismuth, selenium, and bromine elements. This material belongs to the family of mixed-halide and chalcogenide semiconductors, which are primarily of research interest for optoelectronic and photonic applications. BiSeBr and related compositions are being explored for their potential in photovoltaic devices, photodetectors, and nonlinear optical applications, where the tunable bandgap and crystal structure of halide-chalcogenide compounds offer advantages over single-element or binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,275 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.3500 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 1,330 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2422 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.500 | eV | Measured | ||
| ↳ | 1.584 | eV | DFT · OptB88vdW | ||
| ↳ | 2.233 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr) | 60.63 | - | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 10.48 | - | DFT · OptB88vdW | ||
| ↳ | 8.570 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.5700 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 1.680 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00171 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00132 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -162.2 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 327.8 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 18.02 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.5699 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data