BiSeBr is a ternary bismuth-based semiconductor compound combining bismuth, selenium, and bromine elements. This material belongs to the family of mixed-halide and chalcogenide semiconductors, which are primarily of research interest for optoelectronic and photonic applications. BiSeBr and related compositions are being explored for their potential in photovoltaic devices, photodetectors, and nonlinear optical applications, where the tunable bandgap and crystal structure of halide-chalcogenide compounds offer advantages over single-element or binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,275 | ksi | — | ||
Poisson's Ratio(ν) | 0.3500 | - | — | ||
Shear Modulus(G) | 1,330 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2422 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.500 | eV | — | ||
| ↳ | 1.584 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 60.63 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -162.2 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5699 | eV/atom | — |