Bismuth selenide (BiSe₂) is a layered compound ceramic belonging to the bismuth chalcogenide family, known for its anisotropic crystal structure and electronic properties. While primarily investigated in research contexts for thermoelectric and topological material applications, BiSe₂ has potential in thermal management systems and solid-state energy conversion devices where its layered structure and charge carrier behavior are advantageous. The material remains largely experimental compared to more established thermoelectrics, but represents an important compound in the exploration of chalcogenide-based semiconductors for next-generation energy and electronic applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 2,913.8 | ksi | — | ||
Shear Modulus(G) | -204.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2574 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1137 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2232 | eV/atom | — |