BiScO2S

semiconductor

· BiScO2S

BiScO₂S is an experimental mixed-anion semiconductor compound combining bismuth, scandium, oxygen, and sulfur—part of emerging research into oxysulfide semiconductors that aim to achieve tunable band gaps and improved light-absorption properties. While not yet established in commercial production, this material family is being investigated for photocatalytic and optoelectronic applications where conventional semiconductors (such as TiO₂ or CdS) face limitations in visible-light response or toxicity constraints; the bismuth-scandium composition is notable for potential cost and environmental advantages over rare-earth-heavy alternatives.

photocatalysis (water splitting, pollutant degradation)optoelectronic devices (experimental)visible-light semiconductor absorberssolar energy conversion (research phase)thin-film applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.300	eV	—
Magnetic Moment(μB)	-0.000458	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.7600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BiScO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control