BiSCl is a bismuth-based semiconductor compound combining bismuth, sulfur, and chlorine elements. This material belongs to the family of mixed-halide and chalcogenide semiconductors, which are primarily of research interest for optoelectronic and photovoltaic applications rather than established commercial products. BiSCl and related bismuth compounds are investigated for their potential in next-generation solar cells, photodetectors, and light-emitting devices, offering researchers an alternative to lead-based perovskites with potentially improved stability and lower toxicity.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,955.2 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.3200 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 1,807.2 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2115 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.820 | eV | DFT · OptB88vdW | ||
| ↳ | 2.740 | eV | DFT · TBmBJ | ||
| ↳ | 1.890 | eV | Measured | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 8.637 | - | DFT · OptB88vdW | ||
| ↳ | 6.359 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 1.307 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 1.410 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00169 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00148 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -182.1 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 267 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 8.160 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.7206 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data