BiS₂ (bismuth disulfide) is an inorganic ceramic compound belonging to the metal chalcogenide family, characterized by its layered crystal structure similar to other transition metal dichalcogenides. While primarily a research material rather than an established industrial ceramic, BiS₂ has attracted attention in materials science for potential applications in thermoelectric devices, solid-state electronics, and semiconductor research due to its unique electronic properties and layered geometry. Engineers considering this material should recognize it as an emerging compound still in developmental phases, with ongoing investigation into its practical viability compared to more mature ceramic and semiconductor alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,647.8 | ksi | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G) | 1,820.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2097 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -13.84 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2964 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.07318 | eV/atom | — |