BiPbO2N

semiconductor

· BiPbO2N

BiPbO2N is an experimental oxynitride semiconductor combining bismuth, lead, oxygen, and nitrogen elements. This compound belongs to the family of mixed-anion semiconductors being explored for photocatalytic and optoelectronic applications, where the incorporation of nitrogen into oxide frameworks can reduce bandgap and enhance visible-light activity compared to traditional metal oxides.

photocatalysis researchvisible-light driven applicationsexperimental semiconductorsenvironmental remediationoptoelectronic devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6000	eV	—
Magnetic Moment(μB)	-0.000592	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.020	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BiPbO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control