BInN₃ is an experimental ceramic compound in the boron-indium-nitrogen family, synthesized through materials research rather than established industrial production. This material is primarily of academic and exploratory interest for wide-bandgap semiconductor and advanced ceramic applications, with potential relevance to high-temperature electronics, optoelectronics, and thermal management systems where binary nitrides (like GaN and AlN) currently dominate.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 5.000 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 3.380 | eV/atom | — |