BiNbON2
semiconductorBiNbON2 is a bismuth niobium oxynitride ceramic semiconductor, representing a mixed-anion compound combining metallic and non-metallic elements in a layered or perovskite-related crystal structure. This material is primarily of research and development interest rather than established industrial production, investigated for photocatalytic and optoelectronic applications where the bandgap engineering enabled by nitrogen incorporation offers advantages over conventional oxide semiconductors. Its notable distinction lies in its potential for enhanced visible-light absorption and catalytic activity compared to traditional bismuth-based oxides, making it particularly relevant for energy conversion and environmental remediation applications still in experimental phases.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |