BiInON₂ is an experimental ternary ceramic compound combining bismuth, indium, oxygen, and nitrogen elements, belonging to the oxynitride ceramic family. This material is primarily of research interest for optoelectronic and semiconductor applications, where the mixed anion system (oxygen and nitrogen) can engineer band gaps and electronic properties distinct from conventional oxides or nitrides alone. BiInON₂ represents an emerging class of materials being explored for photocatalysis, visible-light-driven applications, and potentially thin-film transistor or light-emission devices, though it remains largely in academic development rather than mainstream industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 1.754 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.280 | eV/atom | — |