BiInOFN

semiconductor

· BiInOFN

BiInOFN is an experimental semiconductor compound composed of bismuth, indium, oxygen, and fluorine elements, belonging to the family of mixed-anion oxyfluoride semiconductors. This material is primarily investigated in research settings for optoelectronic and photocatalytic applications, where the combination of bismuth and indium with fluorine doping is expected to modify bandgap and electronic properties compared to conventional binary oxides. Engineers exploring next-generation photocatalysts, UV detectors, or thin-film devices may consider this compound if conventional materials like BiVO₄ or In₂O₃ require property tuning that fluorine incorporation can provide.

photocatalytic water splittingUV photodetectorsthin-film semiconductorsbandgap engineering researchenvironmental remediation catalystsoptoelectronic devices (experimental)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.4000	eV	—
Magnetic Moment(μB)	3.862e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.7400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BiInOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control