BiInO2S is an experimental ternary semiconductor compound combining bismuth, indium, oxygen, and sulfur—a member of the oxysulfide semiconductor family. While not yet widely commercialized, this material is of research interest for photocatalysis and optoelectronic applications due to its tunable bandgap and mixed-anion composition, which can offer advantages over single-phase binary semiconductors in light absorption and charge separation.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.000 | eV | — | ||
Magnetic Moment(μB) | -0.0000737 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.7200 | eV/atom | — |