Bismuth iodide (BiI) is an inorganic ceramic compound belonging to the halide perovskite family, primarily studied as an emerging material for optoelectronic and photovoltaic applications. While still largely in research phases, BiI and related bismuth halides are being investigated as lead-free alternatives to conventional perovskites due to their potential for tunable bandgaps, lower toxicity, and stability advantages in solar cells and light-emitting devices. Engineers working on next-generation photovoltaic materials and radiation detection systems would consider this material as part of the broader shift toward sustainable, non-toxic semiconducting ceramics.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,521.5 | ksi | DFT · OptB88vdW | ||
Exfoliation Energy(Eexf) | 77.69 | meV/atom | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.4700 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 1,153.1 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2442 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.8200 | eV | DFT · OptB88vdW | ||
| ↳ | 1.014 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr) | 31.74 | - | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 12.32 | - | DFT · OptB88vdW | ||
| ↳ | 9.248 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 1.153 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 1.943 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00122 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00118 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -134 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 230.6 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 31.99 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.02000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.2955 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data