BiGeO2N

semiconductor

· BiGeO2N

BiGeO₂N is an experimental oxynitride semiconductor compound combining bismuth, germanium, oxygen, and nitrogen—a materials research candidate in the broader family of metal oxynitrides being investigated for photocatalytic and optoelectronic applications. While not yet commercialized at scale, this compound is studied for its potential to enable visible-light photocatalysis and narrow-bandgap semiconducting behavior, positioning it as a laboratory-stage alternative to conventional oxides or nitrides in applications demanding efficient light absorption or catalytic activity without costly rare-earth dopants.

photocatalytic water splittingvisible-light photocatalysisthin-film optoelectronicsenvironmental remediationresearch-stage semiconductorsnon-toxic pigment development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5000	eV	—
Magnetic Moment(μB)	-0.000220	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BiGeO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control