BiGaO3 is a bismuth gallium oxide compound belonging to the wide-bandgap semiconductor family, currently in the research and development phase rather than established commercial production. This material is being investigated for high-power and high-temperature electronic applications due to its potential for superior breakdown field strength and thermal stability compared to conventional semiconductors like silicon and gallium arsenide. BiGaO3 represents an emerging candidate in the next generation of power semiconductor materials, with particular interest in extreme environment applications where traditional semiconductors reach their performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.053 | eV | — | ||
| ↳ | 4.100 | eV | — | ||
Magnetic Moment(μB) | 0.000604 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.759 | eV/atom | — | ||
| ↳ | 0.4000 | eV/atom | — |