BiGaN3

ceramic

· BiGaN3

BiGaN3 is a wide-bandgap semiconductor ceramic compound combining bismuth, gallium, and nitrogen, representing an emerging material within the III-V nitride family. This compound is primarily of research and development interest for next-generation power electronics and optoelectronic applications, where wide-bandgap semiconductors offer advantages in high-temperature operation, high-power switching, and radiation resistance compared to conventional silicon-based devices.

wide-bandgap power semiconductorshigh-temperature electronicshigh-power RF devicesradiation-hardened componentsnext-generation power convertersexperimental optoelectronics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	2.912	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BiGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental