BiCaO₂N is an oxynitride semiconductor compound combining bismuth, calcium, oxygen, and nitrogen elements, representing an emerging class of mixed-anion semiconductors. Currently primarily a research material, it is being investigated for photocatalytic and optoelectronic applications where its tunable bandgap and mixed-anion structure offer potential advantages over conventional oxide or nitride semiconductors. The material family shows promise for photocatalytic water splitting, nitrogen reduction, and visible-light-driven applications, though commercial adoption remains limited pending further development and property optimization.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3000 | eV | — | ||
Magnetic Moment(μB) | -0.000732 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.280 | eV/atom | — |