Bismuth tribromide (BiBr3) is a layered halide semiconductor compound that belongs to the family of metal halides with potential optoelectronic and photonic applications. This material is primarily investigated in research and early-stage development contexts for next-generation optoelectronic devices, particularly where its layered crystal structure and semiconducting properties can be exploited. BiBr3 is notable as a lead-free alternative in halide perovskite research, addressing toxicity concerns in emerging photovoltaic and light-emission technologies, though it has not yet achieved widespread commercial adoption compared to other halide platforms.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 13.02 | GPa | — | ||
Exfoliation Energy(Eexf) | 81.02 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.3000 | - | — | ||
Shear Modulus(G) | 6.090 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.888 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.660 | eV | — | ||
| ↳ | 2.309 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 14.72 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -153.6 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.02110 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.7154 | eV/atom | — | ||
| ↳ | -0.7271 | eV/atom | — |