BiAsO₂S is a bismuth arsenic oxyselenide ceramic compound that belongs to the family of mixed-anion semiconducting oxychalcogenides. This is a research-phase material studied primarily for its potential in photovoltaic and optoelectronic applications, where the combination of bismuth, arsenic, oxygen, and sulfur creates tunable electronic properties. Industrial adoption remains limited, but the material family is investigated as an alternative to conventional semiconductors due to potential cost advantages and unusual band-gap engineering capabilities that enable absorption across different light wavelengths.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | -0.00000331 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.7200 | eV/atom | — |