BiAsO2N is an oxynitride ceramic compound combining bismuth, arsenic, oxygen, and nitrogen elements. This is a research-phase material primarily explored in photocatalysis and semiconductor applications, where the mixed anionic framework (oxide-nitride) is designed to enable visible-light activity and tunable electronic properties for environmental remediation and energy conversion.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.0000271 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.7800 | eV/atom | — |